InGaAs Detectors

InGaAs infrared detectors operate with a cutoff wavelength from operate with a cutoff wavelength from 1.7 μm to 2.6 μm, making them versatile for applications like clinical analyzers, NIR-FTIR, Raman spectroscopy, optical communication, and currency validation. These sensors offer enhanced sensitivity, superior quantum efficiency, and minimal dark current providing researchers and engineers with advanced capabilities to tackle photonic challenges.
InGaAs Detectors
InGaAs Linear Arrays

InGaAs Linear Arrays

1.7 μm – 2.6 μm

  • Process control
  • IR spectroscopy
  • Biomedical analysis
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InGaAs Quad Arrays

InGaAs Quad Arrays

1.7 μm – 2.6 μm

  • Laser alignment
  • Position sensing
  • Low dark current
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InGaAs Room Temperature

InGaAs Room Temperature

1.7 μm – 2.6 μm

  • Stable response vs. temp.
  • Wide dynamic range
  • No bias or cooling required
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InGaAs TE Cooled

InGaAs TE Cooled

1.7 μm – 2.6 μm

  • High sensitivity
  • Low noise
  • Extended spectral range
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Technical Articles

MESA Etch and Surface Passivation for InAs Photodetectors - Optical, Electrical Performance, and Stability Improvement

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Progress in Extended Wavelength InGaAs Photodetectors and Comparison with SWIR HgCdTe Photodetectors

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High-Performance VLWIR MBE HgCdTe Photoconductive Detectors

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